▪ Qualified to Renesas Rad Tolerant Screening and
QCI Flow (R34TB0004EU)
▪ Fabricated using P6 SOI process technology
▪ Rail-to-rail operation
▪ No latch-up
▪ Low rDS(ON): <120Ω (maximum)
▪ Single supply operation: 3V to 5.5V
▪ Adjustable logic threshold control
▪ Cold sparing capable: -0.4V to 7V
▪ Analog overvoltage range: -0.4V to 7V
▪ Switch input off leakage: 120nA
▪ Transition times (tAHL): 70ns
▪ Break-before-make switching
▪ ESD protection ≥5kV (HBM)
▪ Passes NASA low outgassing specifications
▪ NiPdAu lead finish (Pb-free, Sn-free)
▪ Operating temperature range: -55°C to +125°C
▪ TID Radiation Lot Acceptance Testing
(LDR: <0.01rad(Si)/s)
• ISL71030M30NZ: 30krad(Si)
• ISL71030M50NZ: 50krad(Si)
▪ SEE Characterization
• No DSEE for V+ = 7V at 43MeV•cm2/mg
• |VOUT SET| < 70mV with V+ = 5.5V and
VOUT = 2.75V at 43MeV•cm2/mg