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STH60N099DM9-2AG 데이터시트 (PDF) - STMicroelectronics
STH60N099DM9-2AG Datasheet PDF - STMicroelectronics
부품명 STH60N099DM9-2AG
다운로드  STH60N099DM9-2AG 다운로드
파일 크기   737.38 Kbytes
페이지   14 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package

STH60N099DM9-2AG Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
STH60N099DM9-2AG Datasheet PDF - STMicroelectronics

부품명 STH60N099DM9-2AG
다운로드  STH60N099DM9-2AG Click to download

파일 크기   737.38 Kbytes
페이지   14 Pages
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
상세설명 Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package

STH60N099DM9-2AG 데이터시트 (HTML) - STMicroelectronics


STH60N099DM9-2AG 제품 세부 정보

Features
• AEC-Q101 qualified
• Fast-recovery body diode
• Worldwide best RDS(on) per area among silicon-based fast recovery devices
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely dv/dt ruggednes
• Excellent switching performance thanks to the extra driving source pin

Applications
• High efficiency switching applications

Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.




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