Description:
The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque
housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes
through the slot.
The OPB817Z has an 0.86” (21.844 mm) deep slot allowing for a longer reach of the optical center line from the mounting
plane. The phototransistor internal apertures are 0.10” x 0.06” (0.25 mm x 1.52 mm) on the sensor side (“S”) and 0.05” x
0.06” (1.27 mm x 1.52 mm) on the emitter side (“E”).
Features:
• 0.20” (5.08 mm) wide gap, 0.86” (21.84 mm) deep slot
• 24” (609 mm) 26 AWG wires
• Dust protection
• Two mounting tabs
Applications:
• Non-contact object sensing
• Assembly line automation
• Machine automation
• Equipment security
• Machine safety