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LP8900TLE-AAEB 데이터시트 (PDF) - Texas Instruments

LP8900TLE-AAEB Datasheet PDF - Texas Instruments
부품명 LP8900TLE-AAEB
다운로드  LP8900TLE-AAEB 다운로드
파일 크기   667.85 Kbytes
페이지   23 Pages
제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments
상세설명 LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

LP8900TLE-AAEB Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
LP8900TLE-AAEB Datasheet PDF - Texas Instruments

부품명 LP8900TLE-AAEB
다운로드  LP8900TLE-AAEB Click to download

파일 크기   667.85 Kbytes
페이지   23 Pages
제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments
상세설명 LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

LP8900TLE-AAEB 데이터시트 (HTML) - Texas Instruments


LP8900TLE-AAEB 제품 세부 정보

1 Features
1• Input Voltage Operation: 1.8 V to 5.5 V
• Output Voltage: 1.2 V to 3.6 V
• Accuracy Over Temperature: 1%
• Output Voltage Noise: 6 μVRMS
• PSRR: 75 dB at 1 kHz
• Dropout: 110 mV at 200 mA Load
• Quiescent Current: 48 μA per Regulator
• Start-Up Time: 80 μs
• Stable With Ceramic Capacitors as Small as 0402
• Thermal-Overload and Short-Circuit Protection

2 Applications
• Battery-Operated Devices
• Hand-Held Information Appliances
• Noise Sensitive RF Applications
• DC-DC Convertor Post Regulation and Filter

3 Description
The LP8900 is a dual LDO capable of supplying 200-
mA output current per regulator. Designed to meet
the requirements of RF and analog circuits, the
LP8900 provides low device noise, high PSRR, low
quiescent current, and superior line transient
response figures.
Using new innovative design techniques, the LP8900
offers class-leading device noise performance without
a noise bypass capacitor.
The LP8900 is designed to be stable with space
saving ceramic capacitors as small as 0402 case
size, enabling a solution size < 4 mm2. Performance
is specified for a –40°C to +125°C junction
temperature range.
Output voltage options from 1.2 V to 3.6 V are
available; for availability, contact your local TI sales
office.




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