1 Features
1• 4-Channel Multi-Rate Operation: Up to 28 Gbps
• Dissipation at a 3-V Supply: 90 mW per Channel
• Differential Transimpedance: 7.5 kΩ
• Bandwidth: 17.5 GHz
• Input-Referred Noise: 2 μArms
• Input Overload Current: 3.2 mAPP
• Programmable Output Voltage
• Adjustable Gain and Bandwidth
• Received Signal Strength Indicator (RSSI) for
Each Channel
• Isolation Between Channels (Die Only): 40 dB
• Single Supply: 2.8 V to 3.3 V
• Pad Control or 2-Wire Control
• On-Chip Filter Capacitors
• –40°C to +100°C Operation
• Die Size: 3250 μm × 1450 μm, 750-μm Channel
Pitch

2 Applications
• 100 Gigabit Ethernet Optical Receivers
• ITU OTL4.4
• CFP2, CFP4, and QSFP28 Modules with Internal
Retiming

3 Description
The ONET2804TLP device is a high-gain, limiting
transimpedance amplifier (TIA) for parallel optical
interconnects with data rates up to 28 Gbps. The
device is used in conjunction with a 750-μm pitch
photodiode array to convert an optical signal into a
differential output voltage. An internal circuit provides
the photodiode reverse bias voltage and senses the
average photocurrent supplied to each photodiode.
The device can be used with pin control or a two-wire
serial interface to allow control of the output
amplitude, gain, bandwidth, and input threshold.
The ONET2804TLP provides 17.5-GHz bandwidth, a
gain of 7.5 kΩ, an input-referred noise of 2 μArms, and
a received signal strength indicator (RSSI) for each
channel. 40-dB isolation between channels results in
low crosstalk penalty in the receiver.
The device requires a single 2.8-V to 3.3-V supply
and typically dissipates 90 mW per channel with a
differential output amplitude of 300 mVPP. The device
is characterized for operation from –40°C to +100°C
and is available in die form with a 750-μm channel
pitch.