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TLV2352 데이터시트 (PDF) - Texas Instruments

TLV2352 Datasheet PDF - Texas Instruments
부품명 TLV2352
다운로드  TLV2352 다운로드
파일 크기   423.13 Kbytes
페이지   25 Pages
제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments
상세설명 LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2352 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
TLV2352 Datasheet PDF - Texas Instruments

부품명 TLV2352
다운로드  TLV2352 Click to download

파일 크기   423.13 Kbytes
페이지   25 Pages
제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments
상세설명 LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2352 데이터시트 (HTML) - Texas Instruments


TLV2352 제품 세부 정보

Wide Range of Supply Voltages
2 V to 8 V
Fully Characterized at 3 V and 5 V
Very-Low Supply-Current Drain
120 mA Typ at 3 V
Output Compatible With TTL, MOS, and
CMOS
Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
High Input Impedance . . . 1012 W Typ
Extremely Low Input Bias Current
5 pA Typ
Common-Mode Input Voltage Range
Includes Ground
Built-In ESD Protection

description
The TLV2352 consists of two independent,
low-power comparators specifically designed for
single power-supply applications and operates
with power-supply rails as low as 2 V. When
powered from a 3-V supply, the typical supply
current is only 120 mA.
The TLV2352 is designed using the Texas Instruments LinCMOSE technology and therefore features an
extremely high input impedance (typically greater than 1012 W), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from – 40°C to 85°C.
The TLV2352M is fully characterized at 3 V and 5 V for operation from – 55°C to 125°C.
The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.




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