 DESCRIPTION
The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at
least 1012 cycles, significantly outperforming Flash memory and E2PROM in the number.
The MB85RC64A does not need a polling sequence after writing to the memory such as the case of Flash
memory or E2PROM.

 FEATURES
• Bit configuration : 8,192 words  8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 1 MHz (Max)
• Read/write endurance : 1012 times / byte
• Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 250 A (Typ @1 MHz)
Standby current 5 A (Typ)
• Operation ambient temperature range :  40 C to + 85 C
• Package : 8-pin plastic SOP
RoHS compliant