DESCRIPTION
The MB85RC256LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC256LY is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC256LY has improved to be
at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC256LY does not need a polling sequence after writing to the memory such as the case of Flash
memory or E2PROM

FEATURES
• Bit configuration : 32,768 words  8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
• Read/write endurance : 1013 times / byte
• Data retention : 70.4 years (  85 C),
19.1 years (  105 C),
5.9 years (  125 C)
• Operating power supply voltage: 1.7 V to 1.95 V
• Low-power consumption : Operating power supply current 0.16 mA (Typ @3.4 MHz)
0.4 mA (Max @3.4 MHz)
Standby current 5.0 A (Typ)
• Operation ambient temperature range
:  40 C to  125 C
• Package : 8-pin plastic SOP (150mil)
8-pin plastic DFN (5mm  6mm)
RoHS compliant