Description
The protects sensitive semiconductor components from
damage or upset due to electrostatic discharge ( ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions for
conducting high transient currents, offer desirable electrical characteristics for
board level protection, such as fast response time, low operating voltage. It
gives designer the flexibility to protect one bi-directional line in applications
where arrays are not practical.
Feature
80W peak pulse power per line (tP = 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±25KV(air), ±25KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
ESDB5V0B0R3T