Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

  Generation V Technology

  Ultra Low On-Resistance

  Dual N and P Channel Mosfet

  Surface Mount

  Available in Tape & Reel

  Dynamic dv/dt Rating

  Fast Switching

  Lead-Free