■ High performance Read-While-Write/Erase
  — 85 ns initial access
  — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode
  — 25 ns asynchronous-page mode
  — 4-, 8-, 16-, and continuous-word burst mode
  — Burst suspend
  — Programmable WAIT configuration
  — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  — 1.8 V low-power buffered programming at 7 µs/byte (Typ)
■ Architecture
  — Asymmetrically-blocked architecture
  — Multiple partitions: 8-Mbit: 128- Mbit devices; 16-Mbit: 256-Mbit devices
  — Four 16-Kword parameter blocks: top or bottom configurations
  — 64-Kword main blocks
  — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
  — Status register for partition and device status
■ Density and Packaging
  — 128- and 256-Mbit density in VF BGA packages
  — 128/0 and 256/0 Density in SCSP
  — 16-bit wide data bus
■ Power
  — VCC (core) = 1.7 V - 2.0 V
  — VCCQ (I/O) = 2.2 V - 3.3 V
  — Standby current: 30 µA (Typ) for 256-Mbit
  — 4-Word synchronous read current: 16 mA (Typ) at 52 MHz
  — Automatic Power Savings mode
■ Security
  — OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits
  — Absolute write protection: VPP = GND
  — Power-transition erase/program lockout
  — Individual zero-latency block locking
  — Individual block lock-down
■ Software
  — 20 µs (Typ) program suspend
  — 20 µs (Typ) erase suspend
  — Numonyx™ Flash Data Integrator (Numonyx™ FDI) optimized
■ Quality and Reliability
  — Expanded temperature: –25° C to +85° C
  — Minimum 100,000 erase cycles per block
  — Intel ETOX* VIII process technology (0.13 µm)