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ID2006SEC-R1 데이터시트 (PDF) - Wuxi Chipown Micro-electronics limited

ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited
부품명 ID2006SEC-R1
다운로드  ID2006SEC-R1 다운로드
파일 크기   570.42 Kbytes
페이지   7 Pages
제조업체  CHIPOWN [Wuxi Chipown Micro-electronics limited]
홈페이지  https://www.chipown.com.cn/en/index.html
Logo CHIPOWN - Wuxi Chipown Micro-electronics limited
상세설명 High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited

부품명 ID2006SEC-R1
다운로드  ID2006SEC-R1 Click to download

파일 크기   570.42 Kbytes
페이지   7 Pages
제조업체  CHIPOWN [Wuxi Chipown Micro-electronics limited]
홈페이지  https://www.chipown.com.cn/en/index.html
Logo CHIPOWN - Wuxi Chipown Micro-electronics limited
상세설명 High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 데이터시트 (HTML) - Wuxi Chipown Micro-electronics limited


ID2006SEC-R1 제품 세부 정보

General description
The ID2006 is a high voltage, high speed power MOSFET
driver with independent high and low side referenced output
channels based on P_SUB P_EPI process. The floating
channel can be used to drive an N-channel power MOSFET
in the high side configuration which operates up to 200 V.
Logic inputs are compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction.

Application
 Small and medium- power motor driver
 Power MOSFETS driver
 Half−Bridge Power Converters
 Full-Bridge Power Converters
 Any Complementary Drive Converters

Features
 Fully operational to+200 V
 3.3V and 5V input logic compatible
 dV/dt Immunity ±50 V/nsec
 Gate drive supply range from 6 V to 18 V
 Typically Source / Sink current capability 1 A/1 A
 Typically -9V negative Vs bias capability




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