FEATURES

Voltage Supply: 3.3V (2.7V~3.6V)

Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit

Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte

Page Read Operation
- Page Size: (2K + 64) Byte
- Read from Cell to Register with Internal ECC: 100us

Memory Cell: 1bit/Memory Cell

Support SPI-Mode 0 and SPI-Mode 31

Fast Write Cycle Time
- Program time:400us
- Block Erase time: 4ms

Hardware Data Protection
- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating Gate Technology
- Internal ECC Requirement: 1bit/512Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years

Command Register Operation

NOP: 4 cycles

OTP Operation

Bad-Block-Protect

Boot Read