Features
• InterFET P0099F Geometry
• Low noise: 2.0 nV/√Hz typical
• High gain: 10mS typical
• Low gate leakage: 2.5pA typical @10V
• Typical IDSS: 10mA
• Typical BVGSS: -55V
• High radiation tolerance
• RoHS, REACH, CMR compliant
• Custom test and binning options available
• SMT, TH, and bare die package options
• SPICE Edge case modeling: InterFET SPICE

Applications
• General: Amplifiers; Switches; Voltage regulators; Oscillators; Signal mixers; Noise generators
• Military/Aero: Radar; Communications; Satellites; Missiles guidance; Hydrophone preamplifiers
• Medical: Medical imaging systems; Medical monitors and recorders; Ultrasound equipment
• Audio: Tone control circuits; Headphone amplifiers; Audio filters; Electret Microphone

Description
The 30V InterFET J176 and J177 are very low leakage low noise P-channel JFETs targeted for high gain
switching, commutator, and chopper applications. Gate leakages are typically less 3pA at room temperatures.
The J177 has a cutoff voltage of less than 2.25V ideal for low-level power supplies. Proprietary InterFET
processes yield exceptionally high radiation tolerance.