Overview
The LE25FW808 is 1024K×8bit Serial flash memory by 3.0V single power supply operation, and support serial peripheral interface (S.P.I.). There are three kinds of erase functions, Small Sector (8K bytes) erase, Sector (64K bytes) erase and Chip erase. If those erase is used properly according to the application, you can efficiently use the memory space. Page program can program the arbitrary data from 1 byte to 256 bytes. LE25FW808 has our original high-speed program function, page program time is 0.3ms (Typ.). Therefore, the overall rewriting time of 8M bit is 1.5s (Typ.), when combining with Chip erase. Moreover, LE25FW808 is stored in 8 pin very small package by making the best use of the feature of serial interface. According to these features, LE25FW808 is the best suited for applications in the portable electronic devices, that require re-programmable nonvolatile storage of program memory.

Features
• Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range
• Operating frequency : 50MHz
• Temperature range : 0 to 70°C
                      –40 to +85°C (Planning)
• Serial interface : SPI mode 0, mode 3 supported
• Sector size : 8K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes/page)
• High-Density read mode (HD_READ)
• Block protect function
• Highly reliable read/write
   Number of rewrite times : 100,000 times
   Small sector erase time : 80ms (typ.), 300ms (max.)
   Sector erase time : 100ms (typ.), 400ms (max.)
   Chip erase time : 250ms (typ.), 3s (max.)
   Page program time : 0.3ms/256 bytes (typ.), 0.5ms/256 bytes (max.)
• Status functions
   Ready/busy information, protect information
• Data retention period : 20 years
• Package : LE25FW808TT MSOP8 (225mil)