FEATURES
• For general purpose applications
• Metal-on-silicon junction Schottky barrier device which is protected by a
   PN junction guard ring. The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices, steering, biasing and
   coupling diodes for fast switching and low logic level applications
• These diodes are also available in the DO-35 case with type
   designation 1N5711 and 1N6263.
• High temperature soldering guaranteed: 260 °C/10 seconds at terminals
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC