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HFP830 데이터시트 (PDF) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
HFP830 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
부품명 HFP830
다운로드  HFP830 다운로드
파일 크기   398.35 Kbytes
페이지   6 Pages
제조업체  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
홈페이지  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
상세설명 N-Channel Enhancement Mode Field Effect Transistor

HFP830 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
HFP830 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

부품명 HFP830
다운로드  HFP830 Click to download

파일 크기   398.35 Kbytes
페이지   6 Pages
제조업체  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
홈페이지  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
상세설명 N-Channel Enhancement Mode Field Effect Transistor

HFP830 데이터시트 (HTML) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD


HFP830 제품 세부 정보

General Description
This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.

Features
• 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF830




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