Features
NPN Transistor
   • BVCEO > 40V
   • IC = 3A Continuous Collector Current
   • Low Saturation Voltage (500mV max @ 1A)
   • RSAT = 195mΩ for a low equivalent On-Resistance
PNP Transistor
   • BVCEO > -40V
   • IC = -3A Continuous Collector Current
   • Low Saturation Voltage (-500mV max @ -1A)
   • RSAT = 350mΩ for a low equivalent On-Resistance
• hFE characterized up to 2A for high current gain hold up
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)

Applications
• DC – DC Converters
• Charging circuits
• Power switches
• LED Backlighting circuits
• Motor control
• Portable applications