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K7B803625B 데이터시트 (PDF) - Samsung semiconductor

K7B803625B Datasheet PDF - Samsung semiconductor
부품명 K7B803625B
다운로드  K7B803625B 다운로드
파일 크기   460.67 Kbytes
페이지   20 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 256Kx36 & 512Kx18 Synchronous SRAM

K7B803625B Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
K7B803625B Datasheet PDF - Samsung semiconductor

부품명 K7B803625B
다운로드  K7B803625B Click to download

파일 크기   460.67 Kbytes
페이지   20 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 256Kx36 & 512Kx18 Synchronous SRAM

K7B803625B 데이터시트 (HTML) - Samsung semiconductor


K7B803625B 제품 세부 정보

GENERAL DESCRIPTION
The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A
• Operating in commeical and industrial temperature range.




유사한 부품 번호 - K7B803625B

제조업체부품명데이터시트상세설명
logo
Samsung semiconductor
K7B803625B SAMSUNG-K7B803625B Datasheet
439Kb / 19P
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
K7B803625B-QC65 SAMSUNG-K7B803625B-QC65 Datasheet
400Kb / 18P
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7B803625B-QC75 SAMSUNG-K7B803625B-QC75 Datasheet
400Kb / 18P
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
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유사한 설명 - K7B803625B

제조업체부품명데이터시트상세설명
logo
Samsung semiconductor
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