N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt

Features
● Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
● Low drain to tab capacitance(<30pF)
● Low RDS(on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Rated for Unclamped Inductive Load Switching (UIS)
● Fast intrinsic Rectifier

Applications
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control

Advantages
● Easy assembly
● Space savings
● High power density