DESCRIPTION
The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.

FEATURES
• Access time: 85 ns (MAX.), 100 ns (MAX.)
• Current consumption:
    Operating: 40 mA (MAX.)
    6 mA (MAX.) (tRC, tWC = 1 µs)
    Standby: 45 µA (MAX.)
• Data Retention:
1.0 µA (MAX. VCCDR = 3 V, tA = 25°C)
• Single power supply: 2.7 V to 3.6 V
• Operating temperature: -40°C to +85°C
• Fully-static operation
• Three-state output
• Not designed or rated as radiation hardened
• Packages:
    32-pin 8 × 20 mm2 TSOP
    32-pin 8 × 13.4 mm2 STSOP
• N-type bulk silicon