DESCRIPTION
The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination.
Because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection.

FEATURES
* High voltage
* Dynamic parameters: low spread
* For reliable operation: minimum lot-to-lot spread
* High switching speed