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IS25LD256C 데이터시트 (PDF) - Integrated Silicon Solution, Inc

IS25LD256C Datasheet PDF - Integrated Silicon Solution, Inc
부품명 IS25LD256C
다운로드  IS25LD256C 다운로드
파일 크기   321.45 Kbytes
페이지   33 Pages
제조업체  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
상세설명 256Kbit Single Operating Voltage Serial Flash Memory

IS25LD256C Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
IS25LD256C Datasheet PDF - Integrated Silicon Solution, Inc

부품명 IS25LD256C
다운로드  IS25LD256C Click to download

파일 크기   321.45 Kbytes
페이지   33 Pages
제조업체  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
상세설명 256Kbit Single Operating Voltage Serial Flash Memory

IS25LD256C 데이터시트 (HTML) - Integrated Silicon Solution, Inc


IS25LD256C 제품 세부 정보

GENERAL DESCRIPTION
The IS25LD256C are 256Kbit Serial Peripheral Interface (SPI) Flash memories, providing single- or dual-output. The devices are designed to support a 33 MHz clock rate in normal read mode, and 100 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage ranging from 2.7 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

FEATURES
• Single Power Supply Operation
    - Low voltage range: 2.7 V - 3.6 V
• Memory Organization
    - IS25LD256C: 32K x 8 (256Kbit)
• Cost Effective Sector/Block Architecture
    -256Kb : Uniform 4KByte sectors / one uniform 32KByte blocks
• Low standby current 1uA (Typ)
• Serial Peripheral Interface (SPI) Compatible
    - Supports single- or dual-output
    - Supports SPI Modes 0 and 3
    - Maximum 33 MHz clock rate for normal read
    - Maximum 100 MHz clock rate for fast read
• Page Program (up to 256 Bytes) Operation
    - Typical 2 ms per page program
• Sector, Block or Chip Erase Operation
    - Maximum 7 ms sector, block or chip erase
• Low Power Consumption
    - Typical 1 mA active read current
    - Typical 10 mA program/erase current
• Hardware Write Protection
    - Protect and unprotect the device from write operation by Write Protect (WP#) Pin
• Software Write Protection
    - The Block Protect (BP2, BP1, BP0) bits allow partial or entire memory to be configured as readonly
• High Product Endurance
    - Guaranteed 200,000 program/erase cycles per single sector
    - Minimum 20 years data retention
• Industrial Standard Pin-out and Package
    - 8-pin 150mil SOIC
    - 8-pin TSSOP
    - Lead-free (Pb-free) package




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Integrated Silicon Solution, Inc 에 대하여


ISSI(Integrated Silicon Solution, Inc.)는 자동차, 산업, 의료 및 통신 시장을 위한 고성능 집적 회로(IC)를 설계 및 판매하는 팹리스 반도체 회사입니다. 이 회사는 1988년에 설립되었으며 미국 캘리포니아주 밀피타스에 본사가 있습니다.

ISSI의 제품 포트폴리오에는 SRAM(Static Random Access Memory), DRAM(Dynamic Random Access Memory), 아날로그 및 혼합 신호 IC가 포함됩니다. 이 회사는 저전력 고속 SRAM을 전문으로 하며 자동차 시장에 DRAM을 공급하는 선도업체입니다.

2015년 ISSI는 중국 Uphill Investment Co., Ltd.에 인수되어 Uphill Investment의 완전 소유 자회사가 되었습니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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