Description
The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
   
Features
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
   
Applications
■ Electronic ballast for fluorescent lighting up to
    256 W (8 x 32 W)
■ Switch mode power supplies