Description
The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication.
The CHK080A-SRA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
The CHK080A-SRA is available in a ceramic-metal flange power package providing low parasitic and low thermal resistance.

Main Features
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power : > 80W
■ High Efficiency : up to 70%
■ DC bias: VDS =50V @ ID_Q =600mA
■ MTTF > 106 hours @ Tj=200°C
■ RoHS Flange Ceramic package