GENERAL DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

FEATURES

  Low VOS (VBE match): 40 µV typical, 100 µV maximum

  Low TCVOS: 0.5 µV/°C maximum

  High hFE: 500 minimum

  Excellent hFE linearity from 10 nA to 10 mA

  Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz

  High breakdown: 45 V min

APPLICATIONS

  Weigh scales

  Low noise, op amp, front end

  Current mirror and current sink/source

  Low noise instrumentation amplifiers

  Voltage controlled attenuators

  Log amplifiers