High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications

• Built-in a schottky barrier diode
   Low forward voltage: VDSF = −0.6 V (max)
• High-speed switching
• Small gate charge: QSW = 8.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 90 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)