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AM29BDS323D 데이터시트 (PDF) - Advanced Micro Devices

AM29BDS323D Datasheet PDF - Advanced Micro Devices
부품명 AM29BDS323D
다운로드  AM29BDS323D 다운로드
파일 크기   746.23 Kbytes
페이지   44 Pages
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices
상세설명 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

AM29BDS323D Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
AM29BDS323D Datasheet PDF - Advanced Micro Devices

부품명 AM29BDS323D
다운로드  AM29BDS323D Click to download

파일 크기   746.23 Kbytes
페이지   44 Pages
제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices
상세설명 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

AM29BDS323D 데이터시트 (HTML) - Advanced Micro Devices


AM29BDS323D 제품 세부 정보

GENERAL DESCRIPTION
The Am29BDS323 is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 2,097,152 words of 16 bits each. This device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array. A 12.0-volt VPP may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single 1.8 volt read, program and erase (1.7 to 1.9 volt)
■ Multiplexed Data and Address for reduced I/O count
   — A0–A15 multiplexed as D0–D15
   — Addresses are latched with AVD# control inputs
      while CE# low
■ Simultaneous Read/Write operation
   — Data can be continuously read from one bank
      while executing erase/program functions in other
      bank
   — Zero latency between read and write operations
■ Read access times at 40 MHz
   — Burst access times of 20 ns @ 30 pF
      at industrial temperature range
   — Asynchronous random access times
      of 110 ns @ 30 pF
   — Synchronous random access times
      of 120 ns @ 30 pF
■ Burst length
   — Continuous linear burst
■ Power dissipation (typical values, 8 bits switching, CL = 30 pF)
   — Burst Mode Read: 25 mA
   — Simultaneous Operation: 40 mA
   — Program/Erase: 15 mA
   — Standby mode: 0.2 µA
■ Sector Architecture
   — Eight 4 Kword sectors and sixty-three sectors of
      32 Kwords each
   — Bank A contains the eight 4 Kword sectors and
      fifteen 32 Kword sectors
   — Bank B contains forty-eight 32 Kword sectors
■ Sector Protection
   — Software command sector locking
   — WP# protects the last two boot sectors
   — All sectors locked when VPP = VIL
■ Software command set compatible with JEDEC 42.4 standards
   — Backwards compatible with Am29F and Am29LV
      families
■ Minimum 1 million erase cycle guarantee per sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      preprograms and erases the entire chip or any
      combination of designated sectors
   — Embedded Program algorithm automatically
      writes and verifies data at specified addresses
■ Data# Polling and toggle bits
   — Provides a software method of detecting
      program and erase operation completion
■ Erase Suspend/Resume
   — Suspends an erase operation to read data from,
      or program data to, a sector that is not being
      erased, then resumes the erase operation
■ Hardware reset input (RESET#)
   — Hardware method to reset the device for reading
      array data
■ CMOS compatible inputs, CMOS compatible outputs
■ Low VCC write inhibit
■ Package Option
   — 47-ball FBGA




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Advanced Micro Devices 에 대하여


Advanced Micro Devices, Inc. (AMD)는 캘리포니아 산타 클라라에 본사를 둔 미국 다국적 반도체 회사입니다.
소비자, 상업 및 전문 시장을위한 마이크로 프로세서, 그래픽 프로세서 및 컴퓨터 시스템의 주요 생산 업체입니다.
AMD는 Ryzen 및 Epyc 프로세서 라인 및 Radeon 그래픽 제품을 포함한 경쟁력있는 CPU 제품으로 유명합니다.
1969 년에 설립 된 AMD는 기술 산업에서 오랜 역사를 가지고 있으며 PC 및 서버 시장에서 주요 업체였습니다.
최근 몇 년 동안 회사는 데이터 센터, 게임 및 인공 지능의 컴퓨팅 전력에 대한 수요 증가를 해결하기 위해 제품 오퍼링을 확장했습니다.
AMD는 혁신 및 고급 기술에 중점을두고 전 세계 고객에게 고성능 컴퓨팅 솔루션을 제공하는 것을 목표로합니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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