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RC2012F510CS 데이터시트 (PDF) - Samsung semiconductor
RC2012F510CS Datasheet PDF - Samsung semiconductor
부품명 RC2012F510CS
다운로드  RC2012F510CS 다운로드
파일 크기   791.37 Kbytes
페이지   2 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 Owing to the reduced lead inductance, the high frequency characteristic is excellent.

RC2012F510CS Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
RC2012F510CS Datasheet PDF - Samsung semiconductor

부품명 RC2012F510CS
다운로드  RC2012F510CS Click to download

파일 크기   791.37 Kbytes
페이지   2 Pages
제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
상세설명 Owing to the reduced lead inductance, the high frequency characteristic is excellent.

RC2012F510CS 데이터시트 (HTML) - Samsung semiconductor




유사한 부품 번호 - RC2012F510CS

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유사한 설명 - RC2012F510CS

제조업체부품명데이터시트상세설명
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ice Components, Ins.		 IN08034 ICE-IN08034 Datasheet
37Kb / 2P		 Isat is the current at which the inductance drops by 15%.
IN08035 ICE-IN08035 Datasheet
37Kb / 2P		 Isat is the current at which the inductance drops by 15%.
IN08052 ICE-IN08052 Datasheet
37Kb / 2P		 Isat is the current at which the inductance drops by 15%.
IN08070 ICE-IN08070 Datasheet
56Kb / 2P		 Isat is the current at which the inductance drops by 20%.
IN08106 ICE-IN08106 Datasheet
37Kb / 2P		 Isat is the current at which the inductance drops by 20%.
IN08124 ICE-IN08124 Datasheet
35Kb / 2P		 Isat is the current at which the inductance drops by 20%.
IN08127 ICE-IN08127 Datasheet
37Kb / 2P		 Isat is the current at which the inductance drops by 15%.
IN08137 ICE-IN08137 Datasheet
36Kb / 2P		 Isat is the current at which the inductance drops by 20%.
IN08144 ICE-IN08144 Datasheet
35Kb / 2P		 Isat is the current at which the inductance drops by 20%.
IN09004 ICE-IN09004 Datasheet
36Kb / 2P		 Isat is the current at which the inductance drops by 15%.
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