DESCRIPTION AND APPLICATIONS
The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for optimum low noise performance. The LP7512’s active areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers in wireless systems.

FEATURES
♦ 0.7 dB Noise Figure at 12 GHz
♦ 12 dB Associated Gain at 12 GHz
♦ 0.4 dB Noise Figure at 2 GHz
♦ 18 dB Associated Gain at 2 GHz
♦ Low DC Power Consumption: 30mW