DESCRIPTION:
The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 high-speed CMOS Dual-Port Static RAM module constructed on a multilayer ceramic substrate using eight IDT7006 (16K x 8) Dual-Port RAMs and two IDT FCT138 decoders or depopulated using only four IDT7006s and two decoders.
This module provides two independent ports with separate control, address, and I/O pins that permit independent and asynchronous access for reads or writes to any location in memory.

FEATURES
• High-density 1M/512K CMOS Dual-Port Static RAM module
• Fast access times:
   —Commercial 35, 40ns
   —Military 40, 50ns
• Fully asynchronous read/write operation from either port
• Full on-chip hardware support of semaphore signaling between ports
• Surface mounted LCC (leadless chip carriers) components on a 64-pin sidebraze DIP (Dual In-line Package)
• Multiple Vcc and GND pins for maximum noise immunity
• Single 5V (±10%) power supply
• Input/outputs directly TTL-compatible