DESCRIPTION

The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™ IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Supply voltage : VCC= 4.5 to 5.5 V

• Saturated output power : PO(sat)= +15.5 dBm TYP. @ f = 500 MHz with external inductor

• Wideband response  : fu= 1.8 GHz TYP. @ 3 dB bandwidth

• Isolation : ISL = 34 dB TYP. @ f = 500 MHz

• Power Gain : GP= 21.5 dB TYP. @ f = 500 MHz