Features
● For general purpose applications
● This diodes features very low turn-on voltage
   and fast switching. This devices are protected
   by a PN junction guard ring against excessive
   voltage, such as electrostatic discharges
● Metal silicon schottky barrier device which is protected
   by a PN junction guard ring. The low forward voltage
   drop and fast switching make it ideal for protection of
   MOS devices,steering,biasing and coupling diodes for
   fast switching and low logic level applications

Mechanical Data
● Case:JEDEC DO--35,glass case
● Polarity: Color band denotes cathode end
● Weight: Approx. 0.13 gram