| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 Hamamatsu Corporation |
S1336
|
232Kb / 4P |
Si photodiode UV to near IR for precision photometry
|
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S11510
|
465Kb / 8P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
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S11500-1007
|
453Kb / 7P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm), back-thinned FFT-CCD
|
 Shenzhen Taychipst Elec... |
1N4942
|
630Kb / 2P |
VOLTAGE RANGE 200 TO 1000 VOLTS CUR RENT 1.0 AMPERE
|
 Microdiode Semiconducto... |
MDDCD2S
|
382Kb / 3P |
Voltage Range - 200 to 1000 Volts Current - 1.0 Ampere Ideal for printed circuit board
|
 Marktech Corporate |
MT5720-IR
|
595Kb / 2P |
Near Infrared LED
|
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MT5720-IR
|
595Kb / 2P |
Near Infrared LED
|
 Hamamatsu Corporation |
R374
|
26Kb / 2P |
Multialkali Photocathode for UV to Near IR Range 28 mm (1-1/8 Inch) Diameter, 11-stage Head-On Type
|
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S9251
|
492Kb / 4P |
High sensitivity in near infrared range
|
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G9203-256D
|
232Kb / 9P |
Near infrared (0.9 to 1.7 m) image sensors
|