General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.

• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection1)

Application
• µC compatible power switch for 12 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits