Description
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. DPAK 1 3 TAB

Features
■ Designed for automotive applications and AEC-Q101 qualified
■ Low on-voltage drop (VCE(sat))
■ Low Cres / Cies ratio (no cross conduction susceptibility)
■ Switching losses include diode recovery energy
■ Short-circuit rated
■ Very soft Ultrafast recovery anti-parallel diode

Applications
■ High frequency inverters
■ SMPS and PFC in both hard switch and resonant topologies
■ Motor drives
■ Injection systems