Description
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. D2PAK 1 3 TAB ' 7$% * 6 CPA AM01476v1 Type VDS (@Tjmax) RDS(on) max. ID STB9NK80Z 800V 1.8Ω 5.2A

Features
■ Designed for automotive applications and AEC-Q101 qualified
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
■ Very low intrinsic capacitances

Applications
■ Switching application