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HFF11N60S 데이터시트 (PDF) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
HFF11N60S Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
부품명 HFF11N60S
다운로드  HFF11N60S 다운로드
파일 크기   716.92 Kbytes
페이지   7 Pages
제조업체  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
홈페이지  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
상세설명 N-Channel Enhancement Mode Field Effect Transistor

HFF11N60S Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
HFF11N60S Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

부품명 HFF11N60S
다운로드  HFF11N60S Click to download

파일 크기   716.92 Kbytes
페이지   7 Pages
제조업체  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
홈페이지  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
상세설명 N-Channel Enhancement Mode Field Effect Transistor

HFF11N60S 데이터시트 (HTML) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD


HFF11N60S 제품 세부 정보

General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features
• 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant




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