Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
 • Advanced Process Technology
 • Ultra Low On-Resistance
 • 175°C Operating Temperature
 • Fast Switching
 • Repetitive Avalanche Allowed up to Tjmax
 • Lead-Free, RoHS Compliant
 • Automotive Qualified *