General Description
Silicon LDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

13.0 Watts Single Ended
Package Style S08P

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT