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LM3641 데이터시트 (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641 Datasheet PDF - National Semiconductor (TI)
부품명 LM3641
다운로드  LM3641 다운로드
파일 크기   304.04 Kbytes
페이지   16 Pages
제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)
상세설명 Lithium-Ion Battery Pack Protection Circuit

LM3641 Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
LM3641 Datasheet PDF - National Semiconductor (TI)

부품명 LM3641
다운로드  LM3641 Click to download

파일 크기   304.04 Kbytes
페이지   16 Pages
제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)
상세설명 Lithium-Ion Battery Pack Protection Circuit

LM3641 데이터시트 (HTML) - National Semiconductor (TI)


LM3641 제품 세부 정보

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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National Semiconductor (TI) 에 대하여


National Semiconductor는 1959 년에 설립 된 미국 반도체 회사였습니다.
이 회사는 아날로그 및 혼합 신호 통합 회로 분야의 혁신으로 유명했으며 전력 관리 및 데이터 변환 제품의 주요 공급 업체였습니다.
National Semiconductor의 제품은 소비자 전자, 산업, 자동차 및 통신을 포함한 다양한 응용 분야에서 사용되었습니다.
이 회사는 2011 년 Texas Instruments에 의해 인수되었으며 제품 및 기술은 Texas Instruments 브랜드로 계속 개발 및 판매되고 있습니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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