The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts
   Output Power — 3.5 Watts
   Power Gain — 14 dB
   Efficiency — 15%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.