| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 NEC |
UPA507TE
|
146Kb / 8P |
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
|
 Renesas Technology Corp |
RJK0379DPA
|
256Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK0381DPA
|
250Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C1DPB
|
268Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK0380DPA
|
88Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03A04DPA
|
88Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C5DPA
|
86Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK0206DPA
|
85Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
PA1980
|
216Kb / 10P |
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
|
|
PA2782GR
|
205Kb / 8P |
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
|