| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 NEC |
UPA2781GR
|
63Kb / 6P |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
|
|
UPA2782GR
|
69Kb / 6P |
SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
|
 Renesas Technology Corp |
RJK03A4DPA
|
248Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03E4DPA
|
111Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK0226DNS
|
171Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
PA2782GR
|
205Kb / 8P |
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
|
 Jiangsu Changjiang Elec... |
CJ7203KDW
|
987Kb / 6P |
N-channel MOSFET and Schottky Barrier Diode
|
 Renesas Technology Corp |
HAT2210R
|
178Kb / 12P |
Silicon N Channel Power MOSFET with Schottky Barrier Diode
|
 Will Semiconductor Ltd. |
WNM2310
|
4Mb / 7P |
Integrated N-Channel Power MOSFET And Schottky Barrier Diode
|
 Renesas Technology Corp |
RJK0240DNS
|
228Kb / 7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Apr 06, 2012 |