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부품명	LL1608--FSL18NJ

상세설명	Gallium Arsenide pHEMT RF Power Field Effect Transistor

파일 크기	1134.31 Kbytes

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제조업체	NXP [NXP Semiconductors]

홈페이지	http://www.nxp.com

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유사한 부품 번호 - LL1608--FSL18NJ

제조업체	부품명	데이터시트	상세설명
TOKO, Inc	LL1608-F10N	362Kb / 2P	STANDARD PARTS SELECTION GUIDE
	LL1608-F12N	362Kb / 2P	STANDARD PARTS SELECTION GUIDE
	LL1608-F15N	362Kb / 2P	STANDARD PARTS SELECTION GUIDE
	LL1608-F15NK	362Kb / 2P	Laminated ceramic allows high SRF
	LL1608-F18N	362Kb / 2P	STANDARD PARTS SELECTION GUIDE

제조업체	부품명	데이터시트	상세설명
Freescale Semiconductor...	MRFG35002N6T1	193Kb / 12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35020AR1	460Kb / 12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35002N6AT1	187Kb / 11P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35003N6AT1	221Kb / 11P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35005MT1	132Kb / 12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35003M6T1	132Kb / 12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35003ANT1	473Kb / 18P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35005ANT1	452Kb / 13P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
	MRFG35010MT1	516Kb / 12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
NXP Semiconductors	MRFG35010A	490Kb / 18P	Gallium Arsenide PHEMT RF Power Field Effect Transistor Rev. 2, 12/2008