IRFS641 pdf, IRFS641 상세설명, IRFS641 데이터시트, IRFS641 view ::: ALLDATASHEET :::

부품명	IRFS641

상세설명	Improved inductive ruggedness

파일 크기	308.86 Kbytes

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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유사한 부품 번호 - IRFS641

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	IRFS641	318Kb / 2P	isc N-Channel MOSFET Transistor

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRFP4137PBF	389Kb / 8P	Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Bruckewell Technology L...	MS75N075	441Kb / 4P	Improved dv/dt Capability, High Ruggedness
Bruckewell Technology L...	MS85N06	725Kb / 3P	Improved dv/dt Capability, High Ruggedness
SemiHow Co.,Ltd.	HRLO120N10H	504Kb / 7P	Enhanced Avalanche Ruggedness
SemiHow Co.,Ltd.	HRP105N15H	171Kb / 7P	Enhanced Avalanche Ruggedness
Samsung semiconductor	SSP4N80	296Kb / 5P	improved inductive ruggedness
Littelfuse	MG12105S-BA1MM	1Mb / 6P	High Ruggedness
Advanced Semiconductor	HVV0405-1000	353Kb / 3P	Excellent Ruggedness
	HVV1011-180L	524Kb / 3P	Excellent Ruggedness REV. A
	HVV1011-1000L	376Kb / 3P	Excellent Ruggedness