RBA012N10R1SBPW pdf, RBA012N10R1SBPW 상세설명, RBA012N10R1SBPW 데이터시트, RBA012N10R1SBPW view ::: ALLDATASHEET :::

부품명	RBA012N10R1SBPW

상세설명	100 V - 350 A - 1.2 mΩ - TOLT for Automotive

파일 크기	495.77 Kbytes

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제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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유사한 부품 번호 - RBA012N10R1SBPW

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FDC8602	257Kb / 7P	Dual N-Channel PowerTrench짰 MOSFET 100 V, 1.2 A, 350 m廓
Fairchild Semiconductor	FQD7N10LTF	1Mb / 8P	N-Channel QFET MOSFET 100 V, 5.8 A, 350 m
Texas Instruments	LMG1205	1Mb / 24P	100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
Texas Instruments	LM5113-Q1	2Mb / 26P	100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
STMicroelectronics	STH272N6F7-6AG	808Kb / 15P	Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A 17-Mar-2016
Renesas Technology Corp	RJK1001DPP-A0	439Kb / 7P	N-Channel MOSFET 100 V, 80 A, 5.5 mΩ 2020.1.9
	RJK1002DPN-A0	383Kb / 7P	N-Channel MOSFET 100 V, 70 A, 7.6 mΩ 2020.1.9
	RJK1002DPP-A0	442Kb / 7P	N-Channel MOSFET 100 V, 70 A, 7.6 mΩ 2020.1.9
	RJK1003DPN-A0	380Kb / 7P	N-Channel MOS FET 100 V, 50 A, 11 mΩ 2020.1.9
	RJK1003DPP-A0	442Kb / 7P	N-Channel MOS FET 100 V, 50 A, 11 mΩ 2020.1.9