NESG2031M16 pdf, NESG2031M16 상세설명, NESG2031M16 데이터시트, NESG2031M16 view ::: ALLDATASHEET :::

부품명	NESG2031M16

상세설명	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

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제조업체	NEC [NEC]

홈페이지	http://www.nec.com/

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유사한 부품 번호 - NESG2031M16

제조업체	부품명	데이터시트	상세설명
California Eastern Labs	NESG2031M16	230Kb / 3P	HIGH FREQUENCY TRANSISTOR
Renesas Technology Corp	NESG2031M16	336Kb / 14P	NPN SILICON GERMANIUM RF TRANSISTOR 2009
	NESG2031M16-A	336Kb / 14P	NPN SILICON GERMANIUM RF TRANSISTOR 2009
	NESG2031M16-T3	336Kb / 14P	NPN SILICON GERMANIUM RF TRANSISTOR 2009
California Eastern Labs	NESG2031M16-T3-A	230Kb / 3P	HIGH FREQUENCY TRANSISTOR

제조업체	부품명	데이터시트	상세설명
NEC	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2101M16	135Kb / 13P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
	NESG210833	103Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG220033	95Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
	NESG240033	103Kb / 8P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
Renesas Technology Corp	NESG220033	224Kb / 10P	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
California Eastern Labs	NESG3031M05-T1-A	673Kb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)