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부품명	PTF080101S

상세설명	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

파일 크기	172.75 Kbytes

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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유사한 부품 번호 - PTF080101S

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTFA043002E	305Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 ??860 MHz Rev. 03.1, 2009-02-20
	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
	PTRA094808NF	463Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 ??960 MHz Rev. 03, 2017-08-21
	PTVA092407NF	434Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07
Cree, Inc	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTRA093818NF	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz