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STP9235 데이터시트 (PDF) - Stanson Technology

부품명	STP9235

상세설명	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

파일 크기	331.89 Kbytes

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제조업체	STANSON [Stanson Technology]

홈페이지	http://www.stansontech.com

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STP9235 데이터시트 (PDF) - Stanson Technology

유사한 부품 번호 - STP9235

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STP90N4F3	343Kb / 14P	N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET 29-Nov-2007
	STP90N4F3	433Kb / 16P	N-channel 40 V, 5.4 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??Power MOSFET 15-Jul-2008
	STP90N4F3	808Kb / 16P	N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??III Power MOSFET 23-Jul-2009
Inchange Semiconductor ...	STP90N4F3	372Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP90N55F4	526Kb / 13P	N-channel 55 V, 0.0064 , 90 A, TO-220 STripFET DeepGATE Power MOSFET 12-Aug-2011

유사한 설명 - STP9235

제조업체	부품명	데이터시트	상세설명
Stanson Technology	ST2319SRG	229Kb / 8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STN4488L	644Kb / 7P	STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
	STN9926	648Kb / 7P	The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	STN9926AA	233Kb / 7P	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	STP4403	321Kb / 6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP4407	545Kb / 6P	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4931	334Kb / 6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb / 6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ACE Technology Co., LTD...	ACE632	1Mb / 11P	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. VER 1.3
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb / 5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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